Wikidata

(Q118782322)

English

Sequential voltage ramp-down of access lines of non-volatile memory device

US patent 11417396

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Statements

title
Sequential voltage ramp-down of access lines of non-volatile memory device (English)
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author name string
Albert Fayrushin (Boise, ID)
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Augusto Benvenuti (Lallio)
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Akira Goda (Setagaya)
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Luca Laurin (Lissone)
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Haitao Liu (Boise, ID)
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significant event
filing
point in time
9 October 2020
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consent
point in time
16 August 2022
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Identifiers

patent number
US11417396
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