(Q121889926)

English

Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices

US patent 11365476

Statements

Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices (English)
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Praket P. Jha (San Jose, CA)
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Allen Ko (Fremont, CA)
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Xinhai Han (Santa Clara, CA)
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Thomas Jongwan Kwon (Dublin, CA)
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Bok Hoen Kim (San Jose, CA)
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Byung Ho Kil (Gangdong-gu)
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Ryeun Kim (Wonju-Si)
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Sang Hyuk Kim (Gyeonggi)
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6 February 2019
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21 June 2022
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