(Q106451718)

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Contribution to the study of silicon / insulator interface faults in MOS transistors

PhD thesis in electrical engineering

Contribution to the study of silicon / insulator interface faults in advanced MOS transistors

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doctoral thesis

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work of science

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Contribution à l'étude des défauts de l'interface silicium/isolant dans les transistors MOS avancés (French)

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microelectronics

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Fayçal Rahmoune

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Grenoble Alpes University

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Grenoble Institute of Technology

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publication date

2004

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