(Q113288767)

English

Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide

scientific article published in May 1995

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scholarly article

1 reference

10.1016/0022-0248(95)80072-K

Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide (English)

1 reference

10.1016/0022-0248(95)80072-K

David B. Oberman

1 reference

10.1016/0022-0248(95)80072-K

language of work or name

1 reference

10.1016/0022-0248(95)80072-K

publication date

1 May 1995

1 reference

10.1016/0022-0248(95)80072-K

Journal of Crystal Growth

1 reference

10.1016/0022-0248(95)80072-K

150

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10.1016/0022-0248(95)80072-K

2

1 reference

10.1016/0022-0248(95)80072-K

915–915

1 reference

10.1016/0022-0248(95)80072-K

Identifiers

10.1016/0022-0248(95)80072-K

0 references

1995JCrGr.150..912O

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