(Q29031975)

English

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

scientific article (publication date: 10 July 2011)

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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures (English)

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26 March 2017

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Myoung-Jae Lee

1

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26 March 2017

Chang Bum Lee

2

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Dongsoo Lee

3

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26 March 2017

Seung Ryul Lee

4

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Man Chang

5

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Ji Hyun Hur

6

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Young-Bae Kim

7

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Chang-Jung Kim

8

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David H. Seo

9

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Sunae Seo

10

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U-In Chung

11

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In-Kyeong Yoo

12

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Kinam Kim

13

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publication date

10 July 2011

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Nature Materials

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10

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8

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625-630

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A polymer/semiconductor write-once read-many-times memory

1 reference

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21 January 2018

Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.

1 reference

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21 January 2018

Carbon nanotube-based nonvolatile random access memory for molecular computing

1 reference

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The missing memristor found

1 reference

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21 January 2018

Memristive switching mechanism for metal/oxide/metal nanodevices

1 reference

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21 January 2018

'Memristive' switches enable 'stateful' logic operations via material implication

1 reference

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21 January 2018

Complementary resistive switches for passive nanocrossbar memories

1 reference

https://api.crossref.org/works/10.1038%2FNMAT3070

21 January 2018

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

1 reference

https://api.crossref.org/works/10.1038%2FNMAT3070

21 January 2018

Ultra-high-density phase-change storage and memory

1 reference

https://pubmed.ncbi.nlm.nih.gov/21743450

12 December 2020

based on heuristic

inferred from PubMed ID database lookup

Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

1 reference

https://pubmed.ncbi.nlm.nih.gov/21743450

12 December 2020

based on heuristic

inferred from PubMed ID database lookup

Ferroelectric thin films: Review of materials, properties, and applications

1 reference

https://api.crossref.org/works/10.1038%2FNMAT3070

7 January 2021

based on heuristic

inferred from DOI database lookup

High switching endurance in TaOx memristive devices

1 reference

https://api.crossref.org/works/10.1038%2FNMAT3070

7 January 2021

based on heuristic

inferred from DOI database lookup

Identifiers

10.1038/NMAT3070

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26 March 2017

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