(Q33462036)

27 July 2017

title

CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors (English)

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27 July 2017

Jing Xia

1

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27 July 2017

Xing Huang

2

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27 July 2017

Ling-Zhi Liu

3

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27 July 2017

Meng Wang

4

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27 July 2017

Lei Wang

5

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27 July 2017

Ben Huang

6

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27 July 2017

Dan-Dan Zhu

7

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27 July 2017

Jun-Jie Li

8

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27 July 2017

Chang-Zhi Gu

9

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27 July 2017

Xiang-Min Meng

10

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27 July 2017

language of work or name

English

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publication date

1 August 2014

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27 July 2017

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27 July 2017

volume

6

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27 July 2017

issue

15

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27 July 2017

page(s)

8949-8955

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Electric Field Effect in Atomically Thin Carbon Films

27 July 2017

cites work

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Two-dimensional gas of massless Dirac fermions in graphene

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Synthesis and photoresponse of large GaSe atomic layers.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Giant frictional dissipation peaks and charge-density-wave slips at the NbSe2 surface.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Few-layer MoS2: a promising layered semiconductor

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Progress, challenges, and opportunities in two-dimensional materials beyond graphene

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Single-layer MoS2 transistors

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Electroluminescence in single layer MoS2.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Single-layer MoS2 phototransistors.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Vapor-phase growth and characterization of Mo(1-x)W(x)S2 (0 ≤ x ≤ 1) atomic layers on 2-inch sapphire substrates.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Valley polarization in MoS2 monolayers by optical pumping

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Control of valley polarization in monolayer MoS2 by optical helicity.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Electrical control of neutral and charged excitons in a monolayer semiconductor.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Synthesis of MoS2 and MoSe2 films with vertically aligned layers

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Large-area synthesis of monolayer and few-layer MoSe2 films on SiO2 substrates.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Preparation of MoS₂-polyvinylpyrrolidone nanocomposites for flexible nonvolatile rewritable memory devices with reduced graphene oxide electrodes

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Epitaxy and photoresponse of two-dimensional GaSe crystals on flexible transparent mica sheets

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Light generation and harvesting in a van der Waals heterostructure

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Strong light-matter interactions in heterostructures of atomically thin films.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

High performance molybdenum disulfide amorphous silicon heterojunction photodetector

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Synthesis of large-area MoS2 atomic layers with chemical vapor deposition

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Vapor-solid growth of high optical quality MoS₂ monolayers with near-unity valley polarization

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Size-dependent structure of MoS2 nanocrystals

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Extraordinary room-temperature photoluminescence in triangular WS2 monolayers

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Raman spectroscopy as a versatile tool for studying the properties of graphene

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

High performance multilayer MoS2 transistors with scandium contacts

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Ultrasensitive photodetectors based on monolayer MoS2

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC4NR02311K

21 January 2018

Identifiers

DOI

10.1039/C4NR02311K

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27 July 2017

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