(Q33767788)

29 July 2017

title

Tunable field control over the binding energy of single dopants by a charged vacancy in GaAs (English)

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29 July 2017

D H Lee

1

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29 July 2017

J A Gupta

series ordinal

2

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29 July 2017

language of work or name

English

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publication date

9 December 2010

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29 July 2017

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29 July 2017

volume

330

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29 July 2017

issue

6012

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29 July 2017

page(s)

1807-1810

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Enhancing semiconductor device performance using ordered dopant arrays.

29 July 2017

cites work

1 reference

https://api.crossref.org/works/10.1126%2FSCIENCE.1197434

Memristive switching mechanism for metal/oxide/metal nanodevices

21 January 2018

1 reference

https://api.crossref.org/works/10.1126%2FSCIENCE.1197434

A silicon-based nuclear spin quantum computer

21 January 2018

1 reference

https://api.crossref.org/works/10.1126%2FSCIENCE.1197434

Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions

21 January 2018

1 reference

https://api.crossref.org/works/10.1126%2FSCIENCE.1197434

Probing semiconductor gap states with resonant tunneling.

21 January 2018

1 reference

https://api.crossref.org/works/10.1126%2FSCIENCE.1197434

The work function of the elements and its periodicity

21 January 2018

1 reference

https://api.crossref.org/works/10.1126%2FSCIENCE.1197434

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

21 January 2018

1 reference

https://api.crossref.org/works/10.1126%2FSCIENCE.1197434

The drive to miniaturization

21 January 2018

1 reference

https://api.crossref.org/works/10.1126%2FSCIENCE.1197434

Field regulation of single-molecule conductivity by a charged surface atom

21 January 2018

1 reference

https://api.crossref.org/works/10.1126%2FSCIENCE.1197434

21 January 2018

Identifiers

DOI

10.1126/SCIENCE.1197434

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29 July 2017

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