(Q38473228)

3 September 2017

title

In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory (English)

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3 September 2017

8

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author name string

Sang-Jun Choi

1

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3 September 2017

Gyeong-Su Park

2

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3 September 2017

Ki-Hong Kim

3

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3 September 2017

Soohaeng Cho

4

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3 September 2017

Woo-Young Yang

5

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3 September 2017

Xiang-Shu Li

6

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3 September 2017

Jung-Hwan Moon

7

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3 September 2017

Kinam Kim

9

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3 September 2017

language of work or name

English

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publication date

14 June 2011

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3 September 2017

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3 September 2017

volume

23

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3 September 2017

issue

29

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3 September 2017

page(s)

3272-3277

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Reproducible switching effect in thin oxide films for memory applications

3 September 2017

cites work

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https://api.crossref.org/works/10.1002%2FADMA.201100507

Nanoionics-based resistive switching memories

21 January 2018

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https://api.crossref.org/works/10.1002%2FADMA.201100507

Memristive switching mechanism for metal/oxide/metal nanodevices

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201100507

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201100507

Nonvolatile memory with multilevel switching: a basic model.

21 January 2018

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https://api.crossref.org/works/10.1002%2FADMA.201100507

The missing memristor found

21 January 2018

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https://api.crossref.org/works/10.1002%2FADMA.201100507

Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

21 January 2018

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https://api.crossref.org/works/10.1002%2FADMA.201100507

Resistive switches and memories from silicon oxide.

21 January 2018

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https://api.crossref.org/works/10.1002%2FADMA.201100507

Learning abilities achieved by a single solid-state atomic switch.

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201100507

Nanoscale memristor device as synapse in neuromorphic systems.

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201100507

Ionic/electronic hybrid materials integrated in a synaptic transistor with signal processing and learning functions.

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201100507

Current switching of resistive states in magnetoresistive manganites

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201100507

21 January 2018

Identifiers

DOI

10.1002/ADMA.201100507

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3 September 2017

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