(Q44493425)

3 December 2017

title

A dual gate MOS-field effect transistor for use as voltage follower in electrophysiology (English)

1 reference

12 March 2023

1 reference

1 reference

12 March 2023

field-effect transistor

1 reference

C. Mabilde

1

1 reference

https://www.ebi.ac.uk/europepmc/webservices/rest/search?resulttype=core&format=json&query=SRC%3AMED%20AND%20EXT_ID%3A4857775

12 March 2023

language of work or name

English

1 reference

National Center for Biotechnology Information

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/esummary.fcgi?db=pubmed&retmode=json&id=4857775

12 March 2023

publication date

1 May 1974

1 reference

3 December 2017

6 May 1974

1 reference

National Center for Biotechnology Information

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/esummary.fcgi?db=pubmed&retmode=json&id=4857775

full work available at URL

12 March 2023

http://link.springer.com/content/pdf/10.1007/BF00589224.pdf

file format

Portable Document Format

1 reference

http://link.springer.com/article/10.1007/BF00589224/fulltext.html

12 March 2023

1 reference

http://link.springer.com/content/pdf/10.1007/BF00589224

12 March 2023

1 reference

12 March 2023

1 reference

3 December 2017

volume

348

1 reference

3 December 2017

issue

4

1 reference

3 December 2017

page(s)

353-355

1 reference

A compensated cathode-follower for use in electro and neurophysiology

3 December 2017

cites work

1 reference

PubMed

https://pubmed.ncbi.nlm.nih.gov/4857775

inferred from PubMed ID database lookup

12 December 2020

based on heuristic

Identifiers

DOI

10.1007/BF00589224

1 reference

release_hq36f4gpjbdf7ann7yh75mqnyi

3 December 2017

Fatcat ID

1 reference

Fatcat

https://api.fatcat.wiki/v0/release/hq36f4gpjbdf7ann7yh75mqnyi

mapped directly with Wikidata item

24 November 2022

based on heuristic

1 reference