(Q50789812)
Statements
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Highly controllable and stable quantized conductance and resistive switching mechanism in single-crystal TiO2 resistive memory on silicon. (English)
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Chengqing Hu
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Martin D McDaniel
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Agham Posadas
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Alexander A Demkov
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John G Ekerdt
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1 August 2014
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14
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4360-4367
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8
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Identifiers
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