(Q54612312)

1 June 2018

title

Theory of hydrogen passivation of shallow-level dopants in crystalline silicon. (English)

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1 June 2018

author name string

Chang KJ

series ordinal

1

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1 June 2018

Chadi DJ

series ordinal

2

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1 June 2018

language of work or name

English

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publication date

1 April 1988

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1 June 2018

published in

Physical Review Letters

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1 June 2018

volume

60

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1 June 2018

issue

14

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1 June 2018

page(s)

1422-1425

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1 June 2018

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.1422

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Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon

21 January 2018

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https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.1422

Evidence for complexes of hydrogen with deep-level defects in bulk III-V materials

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.1422

Hydrogen-acceptor pairs in silicon: Pairing effect on the hydrogen vibrational frequency

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.1422

Microscopic mechanism of hydrogen passivation of acceptor shallow levels in silicon

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.1422

Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.1422

Structure of the boron-hydrogen complex in crystalline silicon

21 January 2018

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https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.1422

Bonding or antibonding position of hydrogen in silicon

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.1422

Hydrogen passivation of boron acceptors in silicon: Raman studies

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.1422

10.1103/PHYSREVLETT.60.1422

21 January 2018

Identifiers

DOI

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1 June 2018

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1 June 2018