(Q56430540)

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Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

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title

Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors (English)

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main subject

field-effect transistor

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A. F. Stassen

1

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R. W. I. de Boer

series ordinal

2

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N. N. Iosad

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3

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A. F. Morpurgo

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4

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language of work or name

English

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publication date

25 October 2004

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published in

Applied Physics Letters

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volume

85

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issue

17

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page(s)

3899-3901

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cites work

Field-effect transistors on rubrene single crystals with parylene gate insulator

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reference URL

https://api.crossref.org/works/10.1063%2F1.1812368

retrieved

21 January 2018

Organic single-crystal field-effect transistors

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reference URL

https://api.crossref.org/works/10.1063%2F1.1812368

retrieved

21 January 2018

Elastomeric transistor stamps: reversible probing of charge transport in organic crystals

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stated in

Crossref

reference URL

https://api.crossref.org/works/10.1063%2F1.1812368

retrieved

21 January 2018

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ResearchGate publication ID

224427847

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(Q56430540)

Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

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