(Q57599011)

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Optical and structural properties of laser annealed Er-doped amorphous silicon thin films

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Optical and structural properties of laser annealed Er-doped amorphous silicon thin films (English)

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M. J. V. Bell

1

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L. A. O. Nunes

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2

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A. R. Zanatta

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3

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publication date

July 1999

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published in

Journal of Applied Physics

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volume

86

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issue

1

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page(s)

701-703

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cites work

1.5 μm room‐temperature luminescence from Er‐implanted oxygen‐doped silicon epitaxial films grown by molecular beam epitaxy

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Crossref

reference URL

https://api.crossref.org/works/10.1063%2F1.370788

retrieved

21 January 2018

Optically active erbium centers in silicon

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Crossref

reference URL

https://api.crossref.org/works/10.1063%2F1.370788

retrieved

21 January 2018

1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+

1 reference

stated in

Crossref

reference URL

https://api.crossref.org/works/10.1063%2F1.370788

retrieved

21 January 2018

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DOI

10.1063/1.370788

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(Q57599011)

Optical and structural properties of laser annealed Er-doped amorphous silicon thin films

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