(Q58093769)

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Plastic relaxation and relaxed buffer layers for semiconductor epitaxy

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Plastic relaxation and relaxed buffer layers for semiconductor epitaxy (English)

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R. Beanland

1

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D.J. Dunstan

series ordinal

2

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P.J. Goodhew

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3

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language of work or name

English

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publication date

April 1996

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published in

Advances in Physics

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volume

45

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issue

2

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page(s)

87-146

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cites work

Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

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https://api.crossref.org/works/10.1080%2F00018739600101477

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21 January 2018

Superlattice and Negative Differential Conductivity in Semiconductors

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https://api.crossref.org/works/10.1080%2F00018739600101477

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21 January 2018

One-Dimensional Dislocations. I. Static Theory

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reference URL

https://api.crossref.org/works/10.1080%2F00018739600101477

retrieved

21 January 2018

Diffuse optical reflectivity measurements on GaAs during molecular‐beam epitaxy processing

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https://api.crossref.org/works/10.1080%2F00018739600101477

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21 January 2018

A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliography

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https://api.crossref.org/works/10.1080%2F00018739600101477

retrieved

21 January 2018

Luminescence properties of GaAs‐Ga₁₋ₓAlₓ As double heterostructures and multiquantum‐well superlattices grown by molecular beam epitaxy

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19 October 2022

https://opencitations.net/index/coci/api/v1/citations/10.1063/1.92237

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10.1080/00018739600101477

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(Q58093769)

Plastic relaxation and relaxed buffer layers for semiconductor epitaxy

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