(Q58154070)

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Graphitization process of SiC(0001) studied by electron energy loss spectroscopy

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title

Graphitization process of SiC(0001) studied by electron energy loss spectroscopy (English)

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author name string

T. Langer

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1

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H. Pfnür

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2

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H. W. Schumacher

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3

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C. Tegenkamp

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4

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language of work or name

English

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publication date

16 March 2009

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published in

Applied Physics Letters

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volume

94

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issue

11

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page(s)

112106

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cites work

Electric Field Effect in Atomically Thin Carbon Films

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Controlling the Electronic Structure of Bilayer Graphene

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Epitaxial graphene on ruthenium

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Electronic confinement and coherence in patterned epitaxial graphene.

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Substrate-induced bandgap opening in epitaxial graphene.

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21 January 2018

Optical absorption and electron energy loss spectra of carbon and boron nitride nanotubes: a first-principles approach

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21 January 2018

Anisotropy of the Optical Constants and the Band Structure of Graphite

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21 January 2018

Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy

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Crossref

reference URL

https://api.crossref.org/works/10.1063%2F1.3100776

retrieved

21 January 2018

Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study

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Local work function measurements of epitaxial graphene

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reference URL

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21 January 2018

Identifiers

DOI

10.1063/1.3100776

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(Q58154070)

Graphitization process of SiC(0001) studied by electron energy loss spectroscopy

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