(Q58375009)

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Exchange-biased magnetic tunnel junctions: Dependence of offset field on junction width

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Exchange-biased magnetic tunnel junctions: Dependence of offset field on junction width (English)

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K.-S. Moon

1

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R. E. Fontana

series ordinal

2

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S. S. P. Parkin

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3

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English

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publication date

14 June 1999

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published in

Applied Physics Letters

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volume

74

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issue

24

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page(s)

3690-3692

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cites work

Tunneling between ferromagnetic films

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https://api.crossref.org/works/10.1063%2F1.123222

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21 January 2018

Giant magnetic tunneling effect in Fe/Al2O3/Fe junction

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https://api.crossref.org/works/10.1063%2F1.123222

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21 January 2018

Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

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https://api.crossref.org/works/10.1063%2F1.123222

retrieved

21 January 2018

Low-field magnetoresistance in magnetic tunnel junctions prepared by contact masks and lithography: 25% magnetoresistance at 295 K in mega-ohm micron-sized junctions (abstract)

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https://api.crossref.org/works/10.1063%2F1.123222

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21 January 2018

Microstructured magnetic tunnel junctions (invited)

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reference URL

https://api.crossref.org/works/10.1063%2F1.123222

retrieved

21 January 2018

Shape-anisotropy-controlled magnetoresistive response in magnetic tunnel junctions

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stated in

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reference URL

https://api.crossref.org/works/10.1063%2F1.123222

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21 January 2018

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DOI

10.1063/1.123222

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(Q58375009)

Exchange-biased magnetic tunnel junctions: Dependence of offset field on junction width

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