(Q59087094)

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Nitride-based semiconductors for blue and green light-emitting devices

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Nitride-based semiconductors for blue and green light-emitting devices (English)

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F. A. Ponce

1

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D. P. Bour

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2

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English

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publication date

March 1997

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published in

Nature

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386

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issue

6623

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page(s)

351-359

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https://scigraph.springernature.com/pub.10.1038/386351a0

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COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS

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Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

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The Use of Metalorganics in the Preparation of Semiconductor Materials

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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

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Hydrogen passivation of shallow-acceptor impurities in p-type GaAs

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P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

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Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

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Atomic arrangement at the AlN/SiC interface

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Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer

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10.1038/386351A0

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1005865224

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(Q59087094)

Nitride-based semiconductors for blue and green light-emitting devices

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