(Q59088367)

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Dependence of magnetoresistivity on charge-carrier density in metallic ferromagnets and doped magnetic semiconductors

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title

Dependence of magnetoresistivity on charge-carrier density in metallic ferromagnets and doped magnetic semiconductors (English)

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1 reference

Pinaki Majumdar

1

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Peter B. Littlewood

series ordinal

2

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language of work or name

English

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publication date

October 1998

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published in

Nature

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volume

395

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issue

6701

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page(s)

479-481

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cites work

Insulator-metal transition and giant magnetoresistance in La 1 − x Sr x MnO 3

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https://api.crossref.org/works/10.1038%2F26703

retrieved

21 January 2018

Giant magnetoresistance in Ti2Mn2O7 with the pyrochlore structure

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reference URL

https://api.crossref.org/works/10.1038%2F26703

retrieved

21 January 2018

Dynamic Jahn-Teller Effect and Colossal Magnetoresistance inLa1−xSrxMnO3

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stated in

Crossref

reference URL

https://api.crossref.org/works/10.1038%2F26703

retrieved

21 January 2018

Colossal magnetoresistance in Cr-based chalcogenide spinels

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Crossref

reference URL

https://api.crossref.org/works/10.1038%2F26703

retrieved

21 January 2018

Lattice effects on the magnetoresistance in doped LaMnO3

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https://api.crossref.org/works/10.1038%2F26703

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7 January 2021

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Double exchange alone does not explain the resistivity of La1-xSrxMnO3

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https://api.crossref.org/works/10.1038%2F26703

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7 January 2021

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Lattice effects in the colossal-magnetoresistance manganites

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https://api.crossref.org/works/10.1038%2F26703

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7 January 2021

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Low temperature magnetoresistance and the magnetic phase diagram of La1-xCaxMnO3

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Crossref

reference URL

https://api.crossref.org/works/10.1038%2F26703

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7 January 2021

based on heuristic

inferred from DOI database lookup

Spin-disorder scattering and localization in magnetoresistive (La1−xYx)2/3Ca1/3MnO3perovskites

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https://api.crossref.org/works/10.1038%2F26703

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7 January 2021

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10.1038/26703

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1011541071

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(Q59088367)

Dependence of magnetoresistivity on charge-carrier density in metallic ferromagnets and doped magnetic semiconductors

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