(Q59383651)

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Stability of n-type doped conducting polymers and consequences for polymeric microelectronic devices

article by D.M. de Leeuw et al published February 1997 in Synthetic Metals

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title

Stability of n-type doped conducting polymers and consequences for polymeric microelectronic devices (English)

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author name string

D.M. de Leeuw

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1

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M.M.J. Simenon

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2

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A.R. Brown

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R.E.F. Einerhand

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publication date

February 1997

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published in

Synthetic Metals

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volume

87

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1

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page(s)

53-59

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New semiconductor device physics in polymer diodes and transistors

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Schottky contacts on a highly doped organic semiconductor

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Properties of the planar poly(3‐octylthiophene)/aluminum Schottky barrier diode

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All-Polymer Field-Effect Transistor Realized by Printing Techniques

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Light-emitting diodes based on conjugated polymers

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Photoinduced electron transfer from a conducting polymer to buckminsterfullerene

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Electrochemical characterization of “n” doped polyheterocyclic conducting polymers—I. Polybithiophene

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Organic metals and semiconductors: The chemistry of polyacetylene, (CH)x, and its derivatives

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Voltammetric characterization of soluble polyacetylene derivatives obtained from the ring-opening metathesis polymerization (ROMP) of substituted cyclooctatetraenes

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10.1016/S0379-6779(97)80097-5

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(Q59383651)

Stability of n-type doped conducting polymers and consequences for polymeric microelectronic devices

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