Wikidata

(Q62558267)

English

Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon

No description defined

In more languages
default for all languages
No label defined

No description defined

Statements

title
Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon (English)
0 references
author name string
D. Cammilleri
series ordinal
1
0 references
F. Fossard
series ordinal
2
0 references
D. Débarre
series ordinal
3
0 references
C. Tran Manh
series ordinal
4
0 references
C. Dubois
series ordinal
5
0 references
E. Bustarret
series ordinal
6
0 references
C. Marcenat
series ordinal
7
0 references
P. Achatz
series ordinal
8
0 references
D. Bouchier
series ordinal
9
0 references
J. Boulmer
series ordinal
10
0 references
publication date
November 2008
0 references
volume
517
0 references
issue
1
0 references
page(s)
75-79
0 references

Identifiers

 
edit
    edit
      edit
        edit
          edit
            edit
              edit
                edit
                  edit
                    Retrieved from "https://www.wikidata.org/w/index.php?title=Q62558267&oldid=1983516385"