(Q62571939)

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Magnetization reversal in GaMnAs layers studied by Kerr effect

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Magnetization reversal in GaMnAs layers studied by Kerr effect (English)

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author name string

D. Hrabovsky

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1

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E. Vanelle

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2

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A. R. Fert

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3

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D. S. Yee

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4

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J. P. Redoules

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5

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J. Sadowski

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6

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J. Kanski

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7

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L. Ilver

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8

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language of work or name

English

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publication date

7 October 2002

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published in

Applied Physics Letters

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volume

81

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issue

15

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page(s)

2806-2808

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cites work

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

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https://api.crossref.org/works/10.1063%2F1.1506204

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21 January 2018

Magnetotransport properties of p-type (In,Mn)As diluted magnetic III-V semiconductors

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Crossref

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https://api.crossref.org/works/10.1063%2F1.1506204

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21 January 2018

Observation of a Ferromagnetic Transition Induced by Two-Dimensional Hole Gas in Modulation-Doped CdMnTe Quantum Wells

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https://api.crossref.org/works/10.1063%2F1.1506204

21 January 2018

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21 January 2018

Making nonmagnetic semiconductors ferromagnetic

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21 January 2018

Carrier-induced ferromagnetism inp−Zn1−xMnxTe

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21 January 2018

Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers

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https://api.crossref.org/works/10.1063%2F1.1506204

retrieved

21 January 2018

Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates

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reference URL

https://api.crossref.org/works/10.1063%2F1.1506204

retrieved

21 January 2018

A Mechanism of Magnetic Hysteresis in Heterogeneous Alloys

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reference URL

https://api.crossref.org/works/10.1063%2F1.1506204

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21 January 2018

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DOI

10.1063/1.1506204

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(Q62571939)

Magnetization reversal in GaMnAs layers studied by Kerr effect

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