(Q62578261)

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Emission from discrete levels in self‐formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck

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Emission from discrete levels in self‐formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck (English)

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1 reference

Kohki Mukai

1

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Nobuyuki Ohtsuka

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2

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Hajime Shoji

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3

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Mitsuru Sugawara

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4

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language of work or name

English

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publication date

20 May 1996

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published in

Applied Physics Letters

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volume

68

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issue

21

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page(s)

3013-3015

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DOI

10.1063/1.116681

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(Q62578261)

Emission from discrete levels in self‐formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck

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