(Q62592511)

English

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

article by K. Muraki et al published 3 August 1992 in Applied Physics Letters

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Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells (English)
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K. Muraki
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S. Fukatsu
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Y. Shiraki
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R. Ito
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3 August 1992
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61
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5
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557-559
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