(Q62603771)

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Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers

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Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers (English)

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1 reference

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P. Ruterana

1

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S. Kret

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2

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A. Vivet

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3

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G. Maciejewski

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4

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P. Dluzewski

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5

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publication date

June 2002

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published in

Journal of Applied Physics

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volume

91

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issue

11

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page(s)

8979-8985

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cites work

Impact of column bending in high-resolution transmission electron microscopy on the strain evaluation of GaAs/InAs/GaAs heterostructures

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https://api.crossref.org/works/10.1063%2F1.1473666

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21 January 2018

Anisotropic Hyperelasticity Based Upon General Strain Measures

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reference URL

https://api.crossref.org/works/10.1063%2F1.1473666

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21 January 2018

Identifiers

DOI

10.1063/1.1473666

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(Q62603771)

Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers

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