(Q74488067)

https://www.ebi.ac.uk/europepmc/webservices/rest/search?query=EXT_ID:10038512%20AND%20SRC:MED&resulttype=core&format=json

11 November 2019

title

Lattice location of deuterium interacting with the boron acceptor in silicon (English)

1 reference

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11 November 2019

0 references

1 reference

3

1 reference

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11 November 2019

author name string

Bech Nielsen B

series ordinal

1

1 reference

https://www.ebi.ac.uk/europepmc/webservices/rest/search?query=EXT_ID:10038512%20AND%20SRC:MED&resulttype=core&format=json

11 November 2019

Andersen JU

series ordinal

2

1 reference

https://www.ebi.ac.uk/europepmc/webservices/rest/search?query=EXT_ID:10038512%20AND%20SRC:MED&resulttype=core&format=json

11 November 2019

language of work or name

English

0 references

publication date

1 January 1988

1 reference

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11 November 2019

number of pages

4

1 reference

based on heuristic

inferred from page(s)

published in

Physical Review Letters

1 reference

https://www.ebi.ac.uk/europepmc/webservices/rest/search?query=EXT_ID:10038512%20AND%20SRC:MED&resulttype=core&format=json

11 November 2019

volume

60

1 reference

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11 November 2019

issue

4

1 reference

https://www.ebi.ac.uk/europepmc/webservices/rest/search?query=EXT_ID:10038512%20AND%20SRC:MED&resulttype=core&format=json

11 November 2019

page(s)

321-324

1 reference

https://www.ebi.ac.uk/europepmc/webservices/rest/search?query=EXT_ID:10038512%20AND%20SRC:MED&resulttype=core&format=json

Hydrogen-acceptor pairs in silicon: Pairing effect on the hydrogen vibrational frequency

11 November 2019

cites work

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.321

Hydrogen-acceptor pairs in silicon

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.321

Microscopic mechanism of hydrogen passivation of acceptor shallow levels in silicon

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.321

21 January 2018

Assali and Leite respond

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.321

Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.321

Defects in single-crystal silicon induced by hydrogenation

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.321

Hydrogen passivation of boron acceptors in silicon: Raman studies

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.321

Beam-induced annealing of defects in silicon after light-ion implantation at 30 K

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.60.321

10.1103/PHYSREVLETT.60.321

21 January 2018

Identifiers

DOI

1 reference

https://www.ebi.ac.uk/europepmc/webservices/rest/search?query=EXT_ID:10038512%20AND%20SRC:MED&resulttype=core&format=json

11 November 2019

1 reference