(Q77027317)

English

Oxide thickness dependence of energy shifts in the Si 2p levels for the SiO2/Si structure, and its elimination by a palladium overlayer

scholarly article

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scholarly article

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Oxide thickness dependence of energy shifts in the Si 2p levels for the SiO2/Si structure, and its elimination by a palladium overlayer (English)

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publication date

1998

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Applied Physics Letters

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73

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933-935

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Theory of Si 2p core-level shifts at the Si(001)-SiO2 interface.

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https://api.crossref.org/works/10.1063%2F1.122042

21 January 2018

Interface state‐induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices

1 reference

https://api.crossref.org/works/10.1063%2F1.122042

21 January 2018

Identifiers

10.1063/1.122042

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