(Q62675585)

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Interface state‐induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices

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Interface state‐induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices (English)

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author name string

H. Kobayashi

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1

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K. Namba

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2

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Y. Yamashita

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3

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Y. Nakato

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4

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T. Komeda

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5

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Y. Nishioka

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6

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publication date

August 1996

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published in

Journal of Applied Physics

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volume

80

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issue

3

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page(s)

1578-1582

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cites work

Microscopic structure of theSiO2/Si interface

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https://api.crossref.org/works/10.1063%2F1.362954

retrieved

21 January 2018

Direct Spectroscopic Evidence of Bias-Induced Shifts of Semiconductor Band Edges for Metal-Insulator-Semiconductor Diodes

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https://api.crossref.org/works/10.1063%2F1.362954

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21 January 2018

Energy distribution of surface states in the Si band-gap for MOS diodes obtained from XPS measurements under biases

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https://api.crossref.org/works/10.1063%2F1.362954

retrieved

21 January 2018

Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer: X-Ray Photoelectron Spectroscopic Measurements under Biases

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https://api.crossref.org/works/10.1063%2F1.362954

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21 January 2018

Energy distribution of interface states in the band gap of GaAs determined from x-ray photoelectron spectra under biases

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https://api.crossref.org/works/10.1063%2F1.362954

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21 January 2018

Theory of the Pb center at the <111> Si/SiO2 interface

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21 January 2018

Effects of electron-electron correlations on defect and interface states in amorphous Si and SiO2 systems

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21 January 2018

Spectroscopic observation of interface states of ultrathin silicon oxide

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reference URL

https://api.crossref.org/works/10.1063%2F1.362954

retrieved

21 January 2018

Vibrationally resolved core-level photoelectron spectroscopy: Si 2p levels of SiH4 and SiF4 molecules

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21 January 2018

Mechanism of submonolayer oxide formation on silicon surfaces upon thermal oxidation

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https://api.crossref.org/works/10.1063%2F1.362954

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21 January 2018

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DOI

10.1063/1.362954

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(Q62675585)

Interface state‐induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices

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