Wikidata

(Q62675593)

English

Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer: X-Ray Photoelectron Spectroscopic Measurements under Biases

article

In more languages
default for all languages
No label defined

No description defined

Statements

title
Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer: X-Ray Photoelectron Spectroscopic Measurements under Biases (English)
0 references
author
Yoshiyuki Yamashita
object named as
Yoshiyuki Yamashita
series ordinal
2
0 references
Tadahiro Komeda
series ordinal
5
object named as
Tadahiro Komeda
0 references
author name string
Hikaru Kobayashi
series ordinal
1
0 references
Toshio Mori
series ordinal
3
0 references
Yoshihiro Nakato
series ordinal
4
0 references
Yasushiro Nishioka
series ordinal
6
0 references
publication date
28 February 1995
0 references
volume
34
0 references
issue
Part 1, No. 2B
0 references
page(s)
959-964
0 references

Identifiers

DOI
10.1143/JJAP.34.959
0 references
 
edit
    edit
      edit
        edit
          edit
            edit
              edit
                edit
                  edit
                    Retrieved from "https://www.wikidata.org/w/index.php?title=Q62675593&oldid=1668765560"