(Q78003870)

English

Atomic displacements of Si in the Si(111)-( sqrt 3 x sqrt 3) R30 degrees-Ag surface studied by high-energy ion channeling

scientific article published on 01 November 1988

Statements

Atomic displacements of Si in the Si(111)-( sqrt 3 x sqrt 3) R30 degrees-Ag surface studied by high-energy ion channeling (English)

Identifiers

 
edit
    edit
      edit
        edit
          edit
            edit
              edit
                edit
                  edit