(Q21708350)

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Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2

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Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2

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Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2 (English)

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condensed matter physics

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1 reference

3

T. Heine

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A. Kuc

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1

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N. Zibouche

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2

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English

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publication date

June 2011

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83

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24

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MoS2 and WS2 analogues of graphene

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Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides

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Emerging photoluminescence in monolayer MoS2.

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7 January 2021

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Single-layer MoS2 transistors

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Rationale for mixing exact exchange with density functional approximations

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The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

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Special points for Brillouin-zone integrations

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Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy

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Electronic structure of MoSe 2 , MoS 2 , and WSe 2 . II. The nature of the optical band gaps

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Electronic structure and scanning-tunneling-microscopy image of molybdenum dichalcogenide surfaces

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Atomically Thin MoS 2 : A New Direct-Gap Semiconductor

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Generalized Gradient Approximation Made Simple

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Two-dimensional nanosheets produced by liquid exfoliation of layered materials

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10.1103/PHYSREVB.83.245213

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OpenCitations bibliographic resource ID

230069

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Consolidated OpenCitations Corpus – April 2017

OpenCitations bibliographic resource ID

230069

(Q21708350)

Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2

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