(Q28242211)

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Ge/Si nanowire heterostructures as high-performance field-effect transistors

scientific article (publication date: 25 May 2006)

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Ge/Si nanowire heterostructures as high-performance field-effect transistors (English)

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field-effect transistor

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Wei Lu

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Charles M. Lieber

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6

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Charles M Lieber

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Jie Xiang

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1

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Yongjie Hu

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3

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Yue Wu

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4

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Hao Yan

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5

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English

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publication date

25 May 2006

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Nature

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volume

441

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issue

7092

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page(s)

489-93

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cites work

Molecular electronics with carbon nanotubes

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https://api.crossref.org/works/10.1038%2FNATURE04796

retrieved

21 January 2018

High-field quasiballistic transport in short carbon nanotubes.

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https://api.crossref.org/works/10.1038%2FNATURE04796

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21 January 2018

One-dimensional hole gas in germanium/silicon nanowire heterostructures

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https://api.crossref.org/works/10.1038%2FNATURE04796

retrieved

21 January 2018

Ballistic carbon nanotube field-effect transistors

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https://api.crossref.org/works/10.1038%2FNATURE04796

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21 January 2018

High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates

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https://api.crossref.org/works/10.1038%2FNATURE04796

retrieved

21 January 2018

Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes

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https://api.crossref.org/works/10.1038%2FNATURE04796

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21 January 2018

High-speed integrated nanowire circuits

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https://api.crossref.org/works/10.1038%2FNATURE04796

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21 January 2018

Growth and transport properties of complementary germanium nanowire field-effect transistors

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https://api.crossref.org/works/10.1038%2FNATURE04796

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7 January 2021

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Synthesis and Fabrication of High-Performance n-Type Silicon Nanowire Transistors

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https://api.crossref.org/works/10.1038%2FNATURE04796

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7 January 2021

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High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics

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7 January 2021

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DOI

10.1038/NATURE04796

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1011883459

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PubMed publication ID

16724062

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ResearchGate publication ID

7058933

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(Q28242211)

Ge/Si nanowire heterostructures as high-performance field-effect transistors

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