(Q34216436)

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Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers

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31 July 2017

Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers (English)

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31 July 2017

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James E Butler

10

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Zéphirin Teukam

1

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31 July 2017

Jacques Chevallier

2

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31 July 2017

Cécile Saguy

3

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31 July 2017

Rafi Kalish

4

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31 July 2017

Dominique Ballutaud

5

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31 July 2017

Michel Barbé

6

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31 July 2017

François Jomard

7

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31 July 2017

Annie Tromson-Carli

8

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31 July 2017

Catherine Cytermann

9

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31 July 2017

Mathieu Bernard

11

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31 July 2017

Céline Baron

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31 July 2017

Alain Deneuville

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31 July 2017

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1 July 2003

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31 July 2017

Nature Materials

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31 July 2017

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31 July 2017

7

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31 July 2017

482-486

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31 July 2017

Hydrogen-boron interactions in p -type diamond

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https://api.crossref.org/works/10.1038%2FNMAT929

21 January 2018

Hydrogen-acceptor interactions in diamond

1 reference

https://api.crossref.org/works/10.1038%2FNMAT929

21 January 2018

Hydrogen diffusion in B-ion-implanted and B-doped homo-epitaxial diamond: passivation of defects vs. passivation of B acceptors

1 reference

https://api.crossref.org/works/10.1038%2FNMAT929

21 January 2018

Activation energy in low compensated homoepitaxial boron-doped diamond films

1 reference

https://api.crossref.org/works/10.1038%2FNMAT929

21 January 2018

Electronic states of phosphorus in diamond

1 reference

https://api.crossref.org/works/10.1038%2FNMAT929

21 January 2018

Multiple trapping of hydrogen in antimony-doped silicon

1 reference

https://api.crossref.org/works/10.1038%2FNMAT929

21 January 2018

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10.1038/NMAT929

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Europe PubMed Central

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31 July 2017

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31 July 2017

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