(Q34598245)

3 August 2017

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters (English)

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3 August 2017

7

Xiangfeng Duan

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3 August 2017

Woo Jong Yu

1

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3 August 2017

Zheng Li

2

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3 August 2017

Hailong Zhou

3

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3 August 2017

Yu Chen

4

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3 August 2017

Yang Wang

5

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3 August 2017

Yu Huang

6

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3 August 2017

language of work or name

English

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publication date

16 December 2012

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3 August 2017

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3 August 2017

12

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3 August 2017

3

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3 August 2017

246-252

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https://scigraph.springernature.com/pub.10.1038/nmat3518

3 August 2017

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cites work

Graphene: an emerging electronic material

1 reference

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Integrated circuits and logic operations based on single-layer MoS2.

7 July 2018

1 reference

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Toward tunable band gap and tunable dirac point in bilayer graphene with molecular doping

7 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4249642

Single-layer MoS2 transistors

7 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4249642

Role of kinetic factors in chemical vapor deposition synthesis of uniform large area graphene using copper catalyst

7 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4249642

High-speed graphene transistors with a self-aligned nanowire gate

7 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4249642

Boron nitride substrates for high-quality graphene electronics.

7 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4249642

7 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4249642

7 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4249642

Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature

7 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4249642

Transfer of large-area graphene films for high-performance transparent conductive electrodes

7 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4249642

Direct observation of a widely tunable bandgap in bilayer graphene

7 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4249642

Control of graphene's properties by reversible hydrogenation: evidence for graphane.

7 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4249642

Energy Band-Gap Engineering of Graphene Nanoribbons

7 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4249642

Two-dimensional gas of massless Dirac fermions in graphene

7 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4249642

Electric Field Effect in Atomically Thin Carbon Films

7 July 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4249642

High-frequency, scaled graphene transistors on diamond-like carbon

7 July 2018

1 reference

Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors

21 January 2018

1 reference

Rational fabrication of graphene nanoribbons using a nanowire etch mask

21 January 2018

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Etching and narrowing of graphene from the edges

21 January 2018

1 reference

Gate-induced insulating state in bilayer graphene devices.

21 January 2018

1 reference

Controlling the Electronic Structure of Bilayer Graphene

21 January 2018

1 reference

Graphene barristor, a triode device with a gate-controlled Schottky barrier.

21 January 2018

1 reference

Excitation Gap in the Normal State of Underdoped Bi2Sr2CaCu2O8+delta

21 January 2018

1 reference

12 December 2020

Gate-Variable Optical Transitions in Graphene

1 reference

12 December 2020

Epitaxial heterostructures of ultrathin topological insulator nanoplate and graphene

1 reference

12 December 2020

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

1 reference

12 December 2020

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

1 reference

12 December 2020

Identifiers

DOI

10.1038/NMAT3518

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Dimensions Publication ID

3 August 2017

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3 August 2017

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