(Q39486505)

12 September 2017

title

Thermal formation of Zn-dopant-vacancy defect complexes on InP(110) surfaces (English)

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12 September 2017

1

Ebert P

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12 September 2017

8

Lagally MG

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12 September 2017

7

Webb MB

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12 September 2017

Heinrich M

2

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12 September 2017

Simon M

3

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12 September 2017

Domke C

4

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12 September 2017

Urban K

5

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12 September 2017

Shih CK

6

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12 September 2017

language of work or name

English

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publication date

1 February 1996

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12 September 2017

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12 September 2017

volume

53

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12 September 2017

issue

8

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12 September 2017

page(s)

4580-4590

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Formation of anion vacancies by Langmuir evaporation from InP and GaAs (110) surfaces at low temperatures.

12 September 2017

cites work

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

Be Delta-Doped Layers in GaAs Imaged with Atomic Resolution Using Scanning Tunneling Microscopy

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

Compensation of p-type doping in ZnSe: The role of impurity-native defect complexes

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

Phosphorus vacancies and adatoms on GaP(110) surfaces studied by scanning tunneling microscopy

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

Geometry and electronic structure of the arsenic vacancy on GaAs(110)

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

Charge state dependent structural relaxation around anion vacancies on InP(110) and GaP(110) surfaces

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

Scanning tunneling microscopy studies of Si donors (SiGa) in GaAs

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

Temperature dependent vacancy concentrations on InP(110) surfaces

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

Local state density and long-range screening of adsorbed oxygen atoms on the GaAs(110) surface

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

Theoretical study of native defects and impurities in InP

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

Theory of relative native- and impurity-defect abundances in compound semiconductors and the factors that influence them

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

Electronic structure, total energies, and abundances of the elementary point defedts in GaAs

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

Phosphorus vacancy in InP: A negative-U center

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

Indium and phosphorus vacancies and antisites in InP

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

Energetics of the As vacancy in GaAs: The stability of the 3+ charge state

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVB.53.4580

21 January 2018

Identifiers

DOI

10.1103/PHYSREVB.53.4580

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release_dnrku2apljgb5cl2cybw7r5iey

12 September 2017

Fatcat ID

0 references

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