(Q42004366)

15 October 2017

Hall and field-effect mobilities in few layered p-WSe₂ field-effect transistors (English)

1 reference

15 October 2017

field-effect transistor

1 reference

10

M Terrones

1 reference

15 October 2017

12

L Balicas

1 reference

15 October 2017

A L Elias

9

0 references

author name string

N R Pradhan

1

1 reference

15 October 2017

D Rhodes

2

1 reference

15 October 2017

S Memaran

3

1 reference

15 October 2017

J M Poumirol

4

1 reference

15 October 2017

D Smirnov

5

1 reference

15 October 2017

S Talapatra

6

1 reference

15 October 2017

S Feng

7

1 reference

15 October 2017

N Perea-Lopez

8

1 reference

15 October 2017

P M Ajayan

11

1 reference

15 October 2017

language of work or name

English

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publication date

11 March 2015

1 reference

15 October 2017

1 reference

15 October 2017

5

1 reference

15 October 2017

8979

1 reference

Creative Commons Attribution 4.0 International

15 October 2017

start time

11 March 2015

1 reference

April 2022 Public Data File from Crossref

copyright status

copyrighted

0 references

exact match

https://scigraph.springernature.com/pub.10.1038/srep08979

0 references

cites work

Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

5 June 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

5 June 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

Integrated circuits based on bilayer MoS₂ transistors

5 June 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

Valley polarization in MoS2 monolayers by optical pumping

5 June 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

Control of valley polarization in monolayer MoS2 by optical helicity.

5 June 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

Single-layer MoS2 phototransistors.

5 June 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

Integrated circuits and logic operations based on single-layer MoS2.

5 June 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2.

5 June 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

Magneto-transport in MoS2: phase coherence, spin-orbit scattering, and the hall factor.

17 August 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

Mobility engineering and a metal-insulator transition in monolayer MoS₂.

17 August 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

Control of Schottky barriers in single layer MoS2 transistors with ferromagnetic contacts

17 August 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

Photoluminescence emission and Raman response of monolayer MoS₂, MoSe₂, and WSe₂.

17 August 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

High performance multilayer MoS2 transistors with scandium contacts

17 August 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infrared.

17 August 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

High-performance single layered WSe₂ p-FETs with chemically doped contacts

17 August 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap.

17 August 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

Graphene barristor, a triode device with a gate-controlled Schottky barrier.

17 August 2018

1 reference

https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pmc&linkname=pmc_refs_pubmed&retmode=json&id=4355631

Phonon-limited mobility inn-type single-layer MoS2from first principles

17 August 2018

1 reference

Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

21 January 2018

1 reference

Breakdown of High-Performance Monolayer MoS2 Transistors

21 January 2018

1 reference

Reply to 'Measurement of mobility in dual-gated MoS2 transistors'

21 January 2018

1 reference

Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

21 January 2018

1 reference

Electric field effect tuning of electron-phonon coupling in graphene

21 January 2018

1 reference

12 December 2020

Measurement of mobility in dual-gated MoS₂ transistors

1 reference

12 December 2020

Observation of anomalous phonon softening in bilayer graphene

1 reference

12 December 2020

Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments

1 reference

12 December 2020

Nature of electronic states in atomically thin MoS₂ field-effect transistors

1 reference

12 December 2020

High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

1 reference

12 December 2020

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

1 reference

12 December 2020

Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility

1 reference

7 January 2021

inferred from DOI database lookup

Identifiers

DOI

10.1038/SREP08979

1 reference

15 October 2017

1 reference

1 reference

15 October 2017

1 reference