(Q45955700)

English

Large-area, transparent, and flexible infrared photodetector fabricated using P-N junctions formed by N-doping chemical vapor deposition grown graphene.

scientific article published on 19 June 2014

Statements

Large-area, transparent, and flexible infrared photodetector fabricated using P-N junctions formed by N-doping chemical vapor deposition grown graphene. (English)

Identifiers

 
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