(Q51059139)

https://www.ebi.ac.uk/europepmc/webservices/rest/search?query=EXT_ID:25173581%20AND%20SRC:MED&resulttype=core&format=json

15 February 2020

title

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors (English)

1 reference

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15 February 2020

1

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15 February 2020

Damien Voiry

2

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15 February 2020

7

Manish Chhowalla

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15 February 2020

author name string

Sibel Ebru Yalcin

3

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15 February 2020

Brittany Branch

4

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15 February 2020

Gautam Gupta

5

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15 February 2020

Aditya D Mohite

6

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15 February 2020

language of work or name

English

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publication date

31 August 2014

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15 February 2020

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15 February 2020

volume

13

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15 February 2020

issue

12

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15 February 2020

page(s)

1128-1134

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https://scigraph.springernature.com/pub.10.1038/nmat4080

15 February 2020

exact match

0 references

cites work

Large and tunable photothermoelectric effect in single-layer MoS2.

1 reference

12 December 2020

Coherent atomic and electronic heterostructures of single-layer MoS2.

1 reference

12 December 2020

Structure of single-molecular-layer MoS2

1 reference

12 December 2020

How good can monolayer MoS₂ transistors be?

1 reference

12 December 2020

Flexible metallic nanowires with self-adaptive contacts to semiconducting transition-metal dichalcogenide monolayers

1 reference

12 December 2020

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts

1 reference

12 December 2020

Channel length scaling of MoS2 MOSFETs

1 reference

12 December 2020

Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2.

1 reference

12 December 2020

Mobility engineering and a metal-insulator transition in monolayer MoS₂.

1 reference

12 December 2020

High performance multilayer MoS2 transistors with scandium contacts

1 reference

12 December 2020

Defect-dominated doping and contact resistance in MoS2

1 reference

12 December 2020

Measurement of mobility in dual-gated MoS₂ transistors

1 reference

12 December 2020

High-gain phototransistors based on a CVD MoS₂ monolayer

1 reference

12 December 2020

Degenerate n-doping of few-layer transition metal dichalcogenides by potassium

1 reference

12 December 2020

Control of Schottky barriers in single layer MoS2 transistors with ferromagnetic contacts

1 reference

12 December 2020

Enhanced catalytic activity in strained chemically exfoliated WS₂ nanosheets for hydrogen evolution

1 reference

12 December 2020

Raman study and lattice dynamics of single molecular layers of MoS2.

1 reference

12 December 2020

Single-layer MoS2 transistors

1 reference

12 December 2020

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition.

1 reference

12 December 2020

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

1 reference

12 December 2020

MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap.

1 reference

12 December 2020

Designing electrical contacts to MoS2 monolayers: a computational study

1 reference

12 December 2020

Transport properties of monolayer MoS2 grown by chemical vapor deposition

1 reference

12 December 2020

Where does the current flow in two-dimensional layered systems?

1 reference

12 December 2020

Photoluminescence from Chemically Exfoliated MoS2

1 reference

12 December 2020

High-performance molybdenum disulfide field-effect transistors with spin tunnel contacts

1 reference

12 December 2020

Integrated circuits based on bilayer MoS₂ transistors

1 reference

12 December 2020

Integrated circuits and logic operations based on single-layer MoS2.

1 reference

12 December 2020

Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors.

1 reference

12 December 2020

Nature of electronic states in atomically thin MoS₂ field-effect transistors

1 reference

12 December 2020

Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.

1 reference

12 December 2020

Low-frequency electronic noise in single-layer MoS2 transistors

1 reference

12 December 2020

Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering.

1 reference

12 December 2020

Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides

1 reference

12 December 2020

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

1 reference

12 December 2020

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

1 reference

12 December 2020

1T-MoS2, a new metallic modification of molybdenum disulfide

1 reference

Crossref

https://api.crossref.org/works/10.1038%2FNMAT4080

7 January 2021

inferred from DOI database lookup

Identifiers

DOI

10.1038/NMAT4080

1 reference

https://www.ebi.ac.uk/europepmc/webservices/rest/search?query=EXT_ID:25173581%20AND%20SRC:MED&resulttype=core&format=json

15 February 2020

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