(Q51659656)

9 April 2018

title

Self-screened high performance multi-layer MoS₂ transistor formed by using a bottom graphene electrode. (English)

1 reference

9 April 2018

1 reference

Deshun Qu

1

1 reference

9 April 2018

Xiaochi Liu

2

1 reference

9 April 2018

Faisal Ahmed

3

1 reference

9 April 2018

Daeyeong Lee

4

1 reference

9 April 2018

Won Jong Yoo

5

1 reference

9 April 2018

language of work or name

English

0 references

publication date

4 November 2015

1 reference

9 April 2018

published in

Nanoscale

1 reference

9 April 2018

volume

7

1 reference

9 April 2018

issue

45

1 reference

9 April 2018

page(s)

19273-19281

1 reference

9 April 2018

Single-layer MoS2 transistors

cites work

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Layer-by-layer thinning of MoS₂ by thermal annealing.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

2D crystal semiconductors: Intimate contacts

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Where does the current flow in two-dimensional layered systems?

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Screening and interlayer coupling in multilayer graphene field-effect transistors.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Black phosphorus field-effect transistors

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Thermionic emission and tunneling at carbon nanotube-organic semiconductor interface.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Layer-dependent electrocatalysis of MoS2 for hydrogen evolution.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Bandgap, mid-gap states, and gating effects in MoS2.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Boron nitride substrates for high-quality graphene electronics.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Electronic transport in two-dimensional graphene

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Study on the resistance distribution at the contact between molybdenum disulfide and metals.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Carrier transport at the metal-MoS2 interface

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Novel field-effect Schottky barrier transistors based on graphene-MoS2 heterojunctions

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Barrier inhomogeneities at vertically stacked graphene-based heterostructures

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Tuning interlayer coupling in large-area heterostructures with CVD-grown MoS2 and WS2 monolayers

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Toward barrier free contact to molybdenum disulfide using graphene electrodes.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Metal-insulator crossover in multilayered MoS2.

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Resonant Tunneling through Discrete Quantum States in Stacked Atomic-Layered MoS2

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

21 January 2018

1 reference

https://api.crossref.org/works/10.1039%2FC5NR06076A

21 January 2018

Identifiers

DOI

10.1039/C5NR06076A

1 reference

9 April 2018

PubMed ID

26531884

1 reference

9 April 2018