(Q56157173)

English

Interatomic potential for silicon defects and disordered phases

scholarly article by João F. Justo et al published 1 August 1998 in Physical Review B

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scholarly article

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Interatomic potential for silicon defects and disordered phases (English)

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Martin Z. Bazant

2

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author name string

João F. Justo

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1

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Efthimios Kaxiras

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3

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V. V. Bulatov

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4

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Sidney Yip

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5

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language of work or name

English

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publication date

1 August 1998

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published in

Physical Review B

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volume

58

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issue

5

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page(s)

2539-2550

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cites work

Iterative minimization techniques for ab initio total-energy calculations: molecular dynamics and conjugate gradients

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https://api.crossref.org/works/10.1103%2FPHYSREVB.58.2539

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21 January 2018

Computer simulation of local order in condensed phases of silicon

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21 January 2018

New empirical approach for the structure and energy of covalent systems

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21 January 2018

Green's-matrix calculation of total energies of point defects in silicon.

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21 January 2018

First-principles calculations of self-diffusion constants in silicon.

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21 January 2018

Structural, bonding, dynamical, and electronic properties of liquid silicon: An ab initio molecular-dynamics study

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21 January 2018

Bonding and disorder in liquid silicon.

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21 January 2018

Structural, dynamical, and electronic properties of amorphous silicon: An ab initio molecular dynamics study.

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21 January 2018

Neutron-diffraction study of the structure of evaporated pure amorphous silicon.

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https://api.crossref.org/works/10.1103%2FPHYSREVB.58.2539

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21 January 2018

Structural relaxation and defect annihilation in pure amorphous silicon

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https://api.crossref.org/works/10.1103%2FPHYSREVB.58.2539

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21 January 2018

Environment-dependent interatomic potential for bulk silicon

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reference URL

https://api.crossref.org/works/10.1103%2FPHYSREVB.58.2539

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21 January 2018

Identifiers

DOI

10.1103/PHYSREVB.58.2539

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arXiv ID

cond-mat/9712058

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(Q56157173)

Interatomic potential for silicon defects and disordered phases

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