(Q57163351)

5

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Alexander Goncharov

object named as

Alexander F Goncharov

Alexander F. Goncharov

4

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author name string

Zhen-Hua Chi

1

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Xiao-Miao Zhao

2

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Haidong Zhang

3

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Tomoko Kagayama

6

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Masafumi Sakata

7

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Xiao-Jia Chen

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

8

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language of work or name

English

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publication date

18 July 2014

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16 July 2014

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published in

Physical Review Letters

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volume

113

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issue

3

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page(s)

036802

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cites work

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Single-layer MoS2 transistors

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Stretching and breaking of ultrathin MoS2.

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Molybdenum disulfide as a lubricant: A review of the fundamental knowledge

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Emerging photoluminescence in monolayer MoS2.

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Atomically Thin MoS 2 : A New Direct-Gap Semiconductor

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Outstanding mechanical properties of monolayer MoS2 and its application in elastic energy storage

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Control of valley polarization in monolayer MoS2 by optical helicity.

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Valley polarization in MoS2 monolayers by optical pumping

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Integrated circuits and logic operations based on single-layer MoS2.

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Effects of strain on band structure and effective masses in MoS2

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Structure change, layer sliding, and metallization in high-pressure MoS2

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Calibration of the ruby pressure gauge to 800 kbar under quasi-hydrostatic conditions

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Finite Elastic Strain of Cubic Crystals

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Superconducting Dome in a Gate-Tuned Band Insulator

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Breakdown of High-Performance Monolayer MoS2 Transistors

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Ripples and Layers in Ultrathin MoS2Membranes

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802

Small-signal amplifier based on single-layer MoS2

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.113.036802