(Q57484902)

English

Valley Polarization in Si(100) at Zero Magnetic Field

scientific article published in Physical Review Letters

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title

Valley Polarization in Si(100) at Zero Magnetic Field (English)

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K. Takashina

1

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author name string

Y. Ono

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2

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A. Fujiwara

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3

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Y. Takahashi

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4

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Y. Hirayama

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5

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language of work or name

English

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publication date

12 June 2006

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published in

Physical Review Letters

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volume

96

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issue

23

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cites work

Intervalley gap anomaly of two-dimensional electrons in silicon.

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Crossref

reference URL

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.96.236801

retrieved

21 January 2018

Valley splitting in strained silicon quantum wells

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stated in

Crossref

reference URL

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.96.236801

retrieved

21 January 2018

Valley splitting in low-density quantum-confined heterostructures studied using tight-binding models

1 reference

stated in

Crossref

reference URL

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.96.236801

retrieved

21 January 2018

Exchange in silicon-based quantum computer architecture.

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Crossref

reference URL

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.96.236801

retrieved

21 January 2018

Resistance resonance in coupled potential wells.

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stated in

Crossref

reference URL

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.96.236801

retrieved

21 January 2018

Manipulation of elementary charge in a silicon charge-coupled device

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stated in

Crossref

reference URL

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.96.236801

retrieved

21 January 2018

Electronic properties of two-dimensional systems

1 reference

19 October 2022

https://opencitations.net/index/coci/api/v1/citations/10.1103/REVMODPHYS.54.437

Identifiers

DOI

10.1103/PHYSREVLETT.96.236801

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arXiv ID

cond-mat/0604118

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PubMed publication ID

16803388

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(Q57484902)

Valley Polarization in Si(100) at Zero Magnetic Field

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