(Q57633998)

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Formation and annihilation of a bond defect in silicon: A ab initio quantum-mechanical characterization

scholarly article in Physical Review B, vol. 57 no. 1, January 1998

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Formation and annihilation of a bond defect in silicon: An ab initio quantum-mechanical characterization (English)

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C. Gatti

2

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Luciano Colombo

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L. Colombo

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3

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F. Cargnoni

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1

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language of work or name

English

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publication date

1 January 1998

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published in

Physical Review B

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volume

57

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issue

1

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page(s)

170-177

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A theoretical investigation on the chemical bonding of interstitial and vacancy defects in silicon during their migration

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21 January 2018

New Developments in Molecular Orbital Theory

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21 January 2018

The Molecular Orbital Theory of Chemical Valency. VIII. A Method of Calculating Ionization Potentials

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21 January 2018

Note on an Approximation Treatment for Many-Electron Systems

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21 January 2018

Crystal field effects on the topological properties of the electron density in molecular crystals: The case of urea

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21 January 2018

The Theory of Quantized Fields. I

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21 January 2018

Electronic Population Analysis on LCAO–MO Molecular Wave Functions. I

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21 January 2018

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10.1103/PHYSREVB.57.170

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(Q57633998)

Formation and annihilation of a bond defect in silicon: A ab initio quantum-mechanical characterization

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