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Work function changes induced by deposition of ultrathin dielectric films on metals: A theoretical analysis

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Work function changes induced by deposition of ultrathin dielectric films on metals: A theoretical analysis (English)

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3

Gianfranco Pacchioni

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Stefano Prada

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1

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Umberto Martinez

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2

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English

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publication date

15 December 2008

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published in

Physical Review B

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78

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23

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Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers.

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Oxide ultra-thin films on metals: new materials for the design of supported metal catalysts.

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Tuning the surface metal work function by deposition of ultrathin oxide films: Density functional calculations

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Self-organization of gold atoms on a polar FeO(111) surface.

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Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation

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21 January 2018

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set

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Projector augmented-wave method

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Electronic structure ofMS(M=Ca,Mg,Fe,Mn): X-ray absorption analysis

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Special points for Brillouin-zone integrations

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Charging of Metal Atoms on UltrathinMgO/Mo(100)Films

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10.1103/PHYSREVB.78.235423

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(Q57783778)

Work function changes induced by deposition of ultrathin dielectric films on metals: A theoretical analysis

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