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Semiconductor nanowires: synthesis, structure and properties
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title
Semiconductor nanowires: synthesis, structure and properties
(English)
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main subject
nanowire
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semiconductor
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author name string
S.T. Lee
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1
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N. Wang
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2
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C.S. Lee
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3
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publication date
June 2000
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published in
Materials Science and Engineering A: Structural Materials: Properties, Microstructures and Processing
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volume
286
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issue
1
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page(s)
16-23
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cites work
VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH
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https://api.crossref.org/works/10.1016%2FS0921-5093%2800%2900658-4
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7 January 2021
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Silicon nanowires prepared by laser ablation at high temperature
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https://api.crossref.org/works/10.1016%2FS0921-5093%2800%2900658-4
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7 January 2021
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A laser ablation method for the synthesis of crystalline semiconductor nanowires
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https://api.crossref.org/works/10.1016%2FS0921-5093%2800%2900658-4
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Transmission electron microscopy evidence of the defect structure in Si nanowires synthesized by laser ablation
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https://api.crossref.org/works/10.1016%2FS0921-5093%2800%2900658-4
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7 January 2021
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SiO2-enhanced synthesis of Si nanowires by laser ablation
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https://api.crossref.org/works/10.1016%2FS0921-5093%2800%2900658-4
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7 January 2021
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Si nanowires grown from silicon oxide
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7 January 2021
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Size effect on the melting temperature of gold particles
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https://api.crossref.org/works/10.1016%2FS0921-5093%2800%2900658-4
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7 January 2021
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Morphology of Si nanowires synthesized by high-temperature laser ablation
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7 January 2021
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Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition
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7 January 2021
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Identifiers
DOI
10.1016/S0921-5093(00)00658-4
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