(Q58864532)

English

Subnanometer Ga2O3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells

scientific article published on 06 July 2012

Statements

Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells (English)

Identifiers

 
edit
    edit
      edit
        edit
          edit
            edit
              edit
                edit
                  edit