(Q58884117)

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Strain-induced giant second-harmonic generation in monolayered 2H-MoX2 (X = S, Se, Te)

article by S. H. Rhim et al published 14 December 2015 in Applied Physics Letters

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Strain-induced giant second-harmonic generation in monolayered 2H-MoX2 (X = S, Se, Te) (English)

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3

A. J. Freeman

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S. H. Rhim

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1

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Yong Soo Kim

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2

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English

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publication date

14 December 2015

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Applied Physics Letters

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volume

107

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issue

24

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241908

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Atomically Thin MoS 2 : A New Direct-Gap Semiconductor

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Superconducting Dome in a Gate-Tuned Band Insulator

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Emerging photoluminescence in monolayer MoS2.

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Optical Spectrum of MoS 2 : Many-Body Effects and Diversity of Exciton States

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21 January 2018

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

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21 January 2018

Strong optical nonlinearity of CVD-grownMoS2monolayer as probed by wavelength-dependent second-harmonic generation

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Observation of intense second harmonic generation from MoS 2 atomic crystals

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Second harmonic microscopy of monolayer MoS 2

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Hybrid germanium iodide perovskite semiconductors: active lone pairs, structural distortions, direct and indirect energy gaps, and strong nonlinear optical properties

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Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

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21 January 2018

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(Q58884117)

Strain-induced giant second-harmonic generation in monolayered 2H-MoX2 (X = S, Se, Te)

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