(Q59058871)

ORCID Public Data File 2021

author name string

Ming Fang

1

0 references

Fengyun Wang

3

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Zai-xing Yang

4

0 references

SenPo Yip

5

0 references

Guofa Dong

6

0 references

Jared J. Hou

7

0 references

Yulun Chueh

8

0 references

Johnny C. Ho

Creative Commons Attribution 3.0 Unported

9

0 references

publication date

2014

0 references

published in

Journal of Nanomaterials

0 references

volume

2014

0 references

page(s)

1-14

0 references

copyright license

start time

1 January 2014

1 reference

April 2022 Public Data File from Crossref

copyright status

copyrighted

1 reference

April 2022 Public Data File from Crossref

cites work

Semiconductor nanowires for energy conversion

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Semiconductor nanowires: A platform for nanoscience and nanotechnology

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Flexible carbon-nanofiber connectors with anisotropic adhesion properties

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Highly active and enhanced photocatalytic silicon nanowire arrays.

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Diameter-dependent electron mobility of InAs nanowires

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn.

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Monolayer resist for patterned contact printing of aligned nanowire arrays

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Parallel array InAs nanowire transistors for mechanically bendable, ultrahigh frequency electronics.

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Recent advances in large-scale assembly of semiconducting inorganic nanowires and nanofibers for electronics, sensors and photovoltaics

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Large-scale integration of semiconductor nanowires for high-performance flexible electronics.

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

A III–V nanowire channel on silicon for high-performance vertical transistors

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Growth of nanowire superlattice structures for nanoscale photonics and electronics

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Tunnel field-effect transistors as energy-efficient electronic switches

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices.

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Quantized conductance in an InSb nanowire

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Electron trapping in InP nanowire FETs with stacking faults

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Solid-phase diffusion mechanism for GaAs nanowire growth.

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

A laser ablation method for the synthesis of crystalline semiconductor nanowires

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Crystalline GaSb nanowires synthesized on amorphous substrates: from the formation mechanism to p-channel transistor applications.

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors.

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Surface roughness induced electron mobility degradation in InAs nanowires.

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors.

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Single InAs/GaSb nanowire low-power CMOS inverter.

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Synthesis and properties of antimonide nanowires

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859

Electrical contacts to one- and two-dimensional nanomaterials

21 January 2018

1 reference

https://api.crossref.org/works/10.1155%2F2014%2F702859