(Q59484213)

https://www.ebi.ac.uk/europepmc/webservices/rest/search?query=EXT_ID:25150560%20AND%20SRC:MED&resulttype=core&format=json

13 March 2020

title

Lateral heterojunctions within monolayer MoSe2-WSe2 semiconductors (English)

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13 March 2020

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2

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13 March 2020

Ana M. Sanchez

3

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13 March 2020

Jonathan J P Peters

4

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13 March 2020

Richard Beanland

5

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13 March 2020

Wang Yao

8

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13 March 2020

author name string

Chunming Huang

1

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13 March 2020

Pasqual Rivera

7

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13 March 2020

Xiaodong Xu

10

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13 March 2020

Jason S Ross

6

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13 March 2020

David H Cobden

9

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13 March 2020

language of work or name

English

0 references

publication date

24 August 2014

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13 March 2020

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13 March 2020

volume

13

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13 March 2020

issue

12

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13 March 2020

page(s)

1096-1101

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In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes

13 March 2020

cites work

1 reference

12 December 2020

Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers

1 reference

12 December 2020

Atomic-layer triangular WSe2 sheets: synthesis and layer-dependent photoluminescence property

1 reference

12 December 2020

Graphene and boron nitride lateral heterostructures for atomically thin circuitry.

1 reference

12 December 2020

Optical generation of excitonic valley coherence in monolayer WSe2.

1 reference

12 December 2020

Intrinsic structural defects in monolayer molybdenum disulfide

1 reference

12 December 2020

Mobility engineering and a metal-insulator transition in monolayer MoS₂.

1 reference

12 December 2020

Electrical control of neutral and charged excitons in a monolayer semiconductor.

1 reference

12 December 2020

Single-layer MoS2 phototransistors.

1 reference

12 December 2020

Emerging photoluminescence in monolayer MoS2.

1 reference

12 December 2020

Tightly bound trions in monolayer MoS2.

1 reference

12 December 2020

Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy

1 reference

12 December 2020

Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2.

1 reference

12 December 2020

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide.

1 reference

12 December 2020

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

1 reference

12 December 2020

Photoluminescence emission and Raman response of monolayer MoS₂, MoSe₂, and WSe₂.

1 reference

12 December 2020

Atomically Thin MoS 2 : A New Direct-Gap Semiconductor

1 reference

12 December 2020

High-luminosity blue and blue-green gallium nitride light-emitting diodes

1 reference

12 December 2020

Electroluminescence in single layer MoS2.

1 reference

12 December 2020

Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides

1 reference

12 December 2020

Synthesis of large-area MoS2 atomic layers with chemical vapor deposition

1 reference

12 December 2020

Large-area vapor-phase growth and characterization of MoS(2) atomic layers on a SiO(2) substrate

1 reference

12 December 2020

Chemical vapor sensing with monolayer MoS2.

1 reference

12 December 2020

Vapor-solid growth of high optical quality MoS₂ monolayers with near-unity valley polarization

1 reference

12 December 2020

Heteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges

1 reference

12 December 2020

Band offsets and heterostructures of two-dimensional semiconductors

1 reference

7 January 2021

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

1 reference

7 January 2021

Two-dimensional semiconductor alloys: Monolayer Mo1−xWxSe2

1 reference

7 January 2021

Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures

1 reference

7 January 2021

Identifiers

DOI

10.1038/NMAT4064

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13 March 2020

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