(Q60123179)

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Lattice relaxation due to hydrogen passivation in boron‐doped silicon

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Lattice relaxation due to hydrogen passivation in boron‐doped silicon (English)

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M. Stutzmann

1

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author name string

J. Harsanyi

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2

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A. Breitschwerdt

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3

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C. P. Herrero

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4

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publication date

16 May 1988

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published in

Applied Physics Letters

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volume

52

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issue

20

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page(s)

1667-1669

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cites work

Hydrogen passivation of boron acceptors in silicon: Raman studies

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https://api.crossref.org/works/10.1063%2F1.99052

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21 January 2018

Structure of the boron-hydrogen complex in crystalline silicon

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reference URL

https://api.crossref.org/works/10.1063%2F1.99052

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21 January 2018

Passivation of shallow acceptors by H in Si: A microscopic study by perturbed angular correlations

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reference URL

https://api.crossref.org/works/10.1063%2F1.99052

retrieved

21 January 2018

Acoustic deformation potentials and heterostructure band offsets in semiconductors

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stated in

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reference URL

https://api.crossref.org/works/10.1063%2F1.99052

retrieved

21 January 2018

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DOI

10.1063/1.99052

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(Q60123179)

Lattice relaxation due to hydrogen passivation in boron‐doped silicon

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