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English
Nanoelectronics from the bottom up.
scientific article published on November 2007
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scholarly article
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Europe PubMed Central
PubMed ID
17972939
retrieved
17 August 2017
review article
1 reference
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Europe PubMed Central
title
Nanoelectronics from the bottom up.
(English)
1 reference
stated in
Europe PubMed Central
PubMed ID
17972939
retrieved
17 August 2017
author
Wei Lu
object named as
Wei Lu
series ordinal
1
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Charles M. Lieber
series ordinal
2
object named as
Charles M Lieber
1 reference
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Europe PubMed Central
PubMed ID
17972939
retrieved
17 August 2017
language of work or name
English
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publication date
1 November 2007
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Europe PubMed Central
PubMed ID
17972939
retrieved
17 August 2017
published in
Nature Materials
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Europe PubMed Central
PubMed ID
17972939
retrieved
17 August 2017
volume
6
1 reference
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Europe PubMed Central
PubMed ID
17972939
retrieved
17 August 2017
issue
11
1 reference
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Europe PubMed Central
PubMed ID
17972939
retrieved
17 August 2017
page(s)
841-850
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stated in
Europe PubMed Central
PubMed ID
17972939
retrieved
17 August 2017
exact match
https://scigraph.springernature.com/pub.10.1038/nmat2028
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A Defect-Tolerant Computer Architecture: Opportunities for Nanotechnology
1 reference
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Crossref
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7 January 2021
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Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks
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Crossref
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7 January 2021
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inferred from DOI database lookup
Logic gates and computation from assembled nanowire building blocks.
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Crossref
reference URL
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7 January 2021
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Carbon nanotube-based nonvolatile random access memory for molecular computing
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Crossref
reference URL
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Electronically Configurable Molecular-Based Logic Gates
1 reference
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reference URL
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Nanoscale molecular-switch crossbar circuits
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Ultrahigh-density nanowire lattices and circuits
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Nanowire crossbar arrays as address decoders for integrated nanosystems
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The crossbar latch: Logic value storage, restoration, and inversion in crossbar circuits
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Direct Observation of Nanoscale Switching Centers in Metal/Molecule/Metal Structures
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A
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A 160-kilobit molecular electronic memory patterned at 10(11) bits per square centimetre
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First-principles calculation of transport properties of a molecular device
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Chemistry. Whence molecular electronics?
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Switching in amorphous-silicon devices
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Materials science. Is there an immortal memory?
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Improved voltage margins using linear error-correcting codes in resistor-logic demultiplexers for nanoelectronics
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Phase-change materials for rewriteable data storage
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Synthesis and characterization of Ge2Sb2Te5 nanowires with memory switching effect.
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Resistor-logic demultiplexers for nanoelectronics based on constant-weight codes
1 reference
stated in
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1 reference
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based on heuristic
inferred from DOI database lookup
Identifiers
DOI
10.1038/NMAT2028
1 reference
stated in
Europe PubMed Central
PubMed ID
17972939
retrieved
17 August 2017
PubMed ID
17972939
1 reference
stated in
Europe PubMed Central
PubMed ID
17972939
retrieved
17 August 2017
ResearchGate publication ID
5873291
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